SPP02N60C3 datasheet(2/12 Pages) INFINEON

2 / 12 page

2003-10-02

Page 2

SPP02N60C3

SPB02N60C3

Final data

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 480 V, ID = 1.8 A, Tj = 125 °C

dv/dt

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

K/W

Thermal resistance, junction - ambient, leaded

RthJA

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 2)

RthJA

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s 3)

Tsold

260

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

600

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=0.25A

700

Gate threshold voltage

VGS(th)

ID=80µΑ, VGS=VDS

2.1

3.9

Zero gate voltage drain current

IDSS

VDS=600V, VGS=0V,

Tj=25°C,

Tj=150°C

0.5

µA

Gate-source leakage current

IGSS

VGS=30V, VDS=0V

100

Drain-source on-state resistance RDS(on) VGS=10V, ID=1.1A,

Tj=25°C

Tj=150°C

2.7

7.3

Ω

Gate input resistance

f=1MHz, open Drain

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