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SPP07N60C2 Datasheet(PDF) 2 Page - Infineon Technologies AG

Part # SPP07N60C2
Description  Cool MOS??Power Transistor
PDF  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPP07N60C2 Datasheet(HTML) 2 Page - Infineon Technologies AG

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2002-08-12
Page 2
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
1.5
K/W
Thremal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.9
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
35
62
-
Linear derating factor
-
-
0.66
W/K
Linear derating factor, FullPAK
-
-
0.25
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Tsold
-
-
260
°C
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V(BR)DSS
600
-
-
V
Drain-source avalanche breakdown voltage
VGS=0V, ID=7.3A
V(BR)DS
-
700
-
Gate threshold voltage, VGS = VDS
ID=350µA
VGS(th)
3.5
4.5
5.5
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
VDS = 600 V, VGS = 0 V, Tj = 150 °C
IDSS
-
-
0.1
-
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS
-
-
100
nA
Drain-source on-state resistance
VGS=10V, ID=4.6A, Tj=25°C
RDS(on)
-
0.54
0.6
Gate input resistance
f = 1 MHz, open drain
RG
-
0.8
-



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