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TLE4917 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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TLE4917 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 13 page ![]() Data Sheet 4 normal state. In that case the output Q is off at high magnetic fields and no current is flowing in the open drain transistor. The output transistor can sink up to 1 mA with a maximal saturation voltage V QSAT. Absolute Maximum Ratings Parameter Symbol Limit Values Unit Notes min. max. Supply Voltage V S – 0.3 5.5 V Supply Current I S – 1 2.5 mA Output Voltage V Q – 0.3 5.5 V Output Current I Q – 1 2 mA Programming Pin Voltage V PRG – 0.3 5.5 1) V Junction temperature T j – 40 150 °C Storage temperature T S – 40 150 °C Magnetic Flux Density B – unlimited mT Thermal Resistance P-TSOP6-6-2 R th JA – 35 K/W 1) V PRG must not exceed Vs by more than 0.3V Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD Protection Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7 Parameter Symbol Limit Values Unit Notes Min. max. ESD Voltage V ESD ± 2 kV R = 1.5 k Ω, C = 100 pF; T = 25 °C |
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