M54527P datasheet(2/4 Pages) MITSUBISHI

2 / 4 page

Aug. 1999

—

1.7

1.4

1.8

5.0

–20

1.6

100

—

1.1

1.0

0.9

1.9

—

1.15

—

2500

—

800

ICEO = 100

µA

VI = 7V, IC = 150mA

VI = 7V, IC = 100mA

VI = 18V

VI = 35V

VI = –35V

IF = 150mA

VR = 40V

VCE = 4V, IC = 150mA, Ta = 25

°C

Collector-emitter breakdown voltage

Input reverse current

Clamping diode forward voltage

Clamping diode reverse current

DC amplification factor

“H” input voltage

“L” input voltage

VIH

VIL

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54527P

6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75

°C)

µA

—

Parameter

—

Limits

min

typ

max

Symbol

Unit

150

Symbol

Unit

Parameter

Test conditions

Limits

min

typ+

max

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

—

300

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

Output voltage

Collector current

per channel

Percent duty cycle less

than 50 %

V (BR) CEO

IIR

hFE

VCE (sat)

Collector-emitter saturation voltage

Input current

ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75

°C)

SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25

°C)

Turn-on time

Turn-off time

ton

toff

CL = 15pF (note 1)

—

Ω

Measured device

OPEN

INPUT

OUTPUT

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

µs, tr = 6ns, tf = 6ns, ZO = 50Ω

VP = 7VP-P

(2) Input-output conditions : RL = 67.5

Ω, VO = 10V

(3) Electrostatic capacity CL includes floating capacitance at

connections and input capacitance at probes

ton

50%

toff

INPUT

OUTPUT

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