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P4M Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # P4M
Description  2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
PDF  3 Pages
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

P4M Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

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DESCRIPTION:
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
2
A
IGT
≤200
μA
VTM
≤1.5
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Storage junction temperature range
Tstg
-40-150
℃
Operating junction temperature range
Tj
-40-110
℃
Repetitive peak off-state voltage
VDRM
600
V
Repetitive peak reverse voltage
VRRM
600
V
RMS on-state current
IT(RMS)
2
A
@
(TC=72℃)
Non repetitive surge peak on-state current
(tp=10ms)
ITSM
20
A
I
2t value for fusing (tp=10ms)
I
2t
2
A
2s
Critical rate of rise of on-state current
dI/dt
50
A
/μs
Peak gate current (tp=20
μs, Tj=110℃)
IGM
0.2
A
Peak gate power (tp=20
μs, Tj=110℃)
PGM
0.5
W
Average gate power dissipation(Tj=110℃)
PG(AV)
0.1
W
A(2)
K(1)
G(3)
RGK
ThinkiSemi 2P4M SCR with the parallel resistor
between Gate and Cathode are especially
recommended for use on straight hair, igniter,
anion generator etc..
Internal structure
TO-202 Pkg Outline
1
2
3
®
2P4M
Pb Free Plating Product
2P4M
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
Pb
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 1/3
Rev.05


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