Linear Integrated Systems

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Doc 201127 05/01/2014 Rev#A6 ECN# LS830 LS831 LS832 LS833

FEATURES

ULTRA LOW DRIFT

ULTRA LOW NOISE

LOW NOISE

√Hz TYP.

LOW CAPACITANCE

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25°C (unless otherwise noted)

Maximum Temperatures

Storage Temperature

-55 to +150°C

Operating Junction Temperature

-55 to +150°C

Maximum Voltage and Current for Each Transistor NOTE 1

Gate Voltage to Drain or Source

40V

Drain to Source Voltage

40V

Gate Forward Current

10mA

Gate Reverse Current

10µA

Maximum Power Dissipation @ TA = 25ºC

Continuous Power Dissipation (Total)

500mW

SYMBOL

CHARACTERISTIC

MIN.

TYP.

MAX.

UNITS

CONDITIONS

Breakdown Voltage

-40

-60

--

V

Gate-to-Gate Breakdown

±40

--

--

V

TRANSCONDUCTANCE

Full Conduction

70

300

500

µS

f = 1kHz

Typical Operation

50

100

200

µS

f = 1kHz

Differential

--

1

5

%

DRAIN CURRENT

Full Conduction

60

400

1000

µA

Differential at Full Conduction

--

2

5

%

ELECTRICAL CHARACTERISTICS TA = 25ºC (unless otherwise noted)

SYMBOL

CHARACTERISTIC

LS830 LS831 LS832 LS833 UNITS

CONDITIONS

5

10

20

75

µV/ºC

Offset Voltage

25

25

25

25

mV

Operating

0.1

0.1

0.1

0.5

pA

High Temperature

0.1

0.1

0.1

0.5

nA

TA= +125ºC

At Full Conduction

0.2

0.2

0.2

1.0

pA

High Temperature

0.5

0.5

0.5

1.0

nA

TA= +125ºC

LS830 LS831 LS832 LS833

ULTRA LOW LEAKAGE LOW DRIFT

MONOLITHIC DUAL N-CHANNEL

JFET AMPLIFIER

Top View

SOIC

Top View

TO-71 & TO-78