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DMNH6012SPS Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMNH6012SPS
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6012SPS Datasheet(HTML) 2 Page - Diodes Incorporated

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DMNH6012SPS
Document number: DS38084 Rev. 3 - 2
2 of 8
www.diodes.com
April 2016
© Diodes Incorporated
DMNH6012SPS
Marking Information
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
TC = +25°C
TC = +100°C
ID
50
30
A
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
IDM
120
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
2.6
A
Avalanche Current, L = 0.1mH (Note 7)
IAS
45
A
Avalanche Energy, L = 0.1mH (Note 7)
EAS
100
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
1.6
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
93
°C/W
t<10s
51
Total Power Dissipation (Note 6)
PD
3.1
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
49
°C/W
t<10s
26
Thermal Resistance, Junction to Case
RθJC
3.8
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
=Manufacturer
’s Marking
H6012SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)



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