Date: 5/25/04

SPX385-1.2 Micropower Voltage Reference

© Copyright 2004 Sipex Corporation

2

Reverse Current (I

Forward Current (I

Operating Temperature Range (T

Continuos Power Dissipation at 25°C (P

TO-92 ................................................................... 775mW

SOIC-8 ................................................................. 750mW

SOT-89 ............................................................... 1000mW

Junction Temperature (T

Storage Temperature (T

Lead Temperature (Soldering 10 sec.), T

I

*

∆T

-5

0.5

5000

0

00

TC in mV/°C =

TC in % /°C =

∆T

A

∆T

A

x 100

()

TC in ppm/°C =

∆T

A

()

ppm

%

mV

Junction Temperature (°C)

015

304560

7590

105

27 ppm/C

0.0027 %/°C

0.033 mV/°C

Figure 2. V

SPX385A-1.2

SPX385-1.2

PARAMETER

CONDITIONS

MIN.

TYP.

MAX

MIN.

TYP.

MAX.

UNIT

Reference Voltage

1.223

1.235

1.247

1.205 1.235

1.260

V

Dynamic Output

F = 20Hz

0.6

1.0

0.6

1.0

Ω

Impedance

I

Reference Voltage

10µA ≤ I

10

20

10

20

mV

Change with I

R

Temperature Coefficient

Note 1

30

50

30

50

ppm/°C

Minimum Operating Current

8

10

8

10

µA

Output Wideband Noise

10Hz ≤ f ≤ 10kHz

60

60

µVrms

Operating Temperature

-40

+85

-40

+85

°C

Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-

INGS may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

Note 1. Three-point measurement guarantees the error band over the specified temperature range.

ABSOLUTE MAXIMUM RATINGS

TYPICAL THERMAL RESISTANCES

PACKAGE

0

JA

0

JA

TYPICAL

DERATING

TO-92

160°C/W

80°C/W

6.3 mW/°C

SOIC-8

175°C/W

45°C/W

5.7mW/°C

SOT-89

110°C/W

8°C/W

9.1mW/°C

ELECTRICAL CHARACTERISTICS

CALCULATING AVERAGE TEMPERATURE COEFFICIENT (TC)