Cascadable Amplifier

10 to 1200 MHz

Rev. V3

A66 / SMA66

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

5-1250

10-1200

10-1200

Small Signal Gain (min)

dB

23.5

22.0

21.0

Gain Flatness (max)

dB

±0.3

±0.7

±1.0

Reverse Isolation

dB

32

Noise Figure (max)

dB

4.0

5.0

5.5

Power Output

@ 1 dB comp. (min)

dBm

15.0

14.0

13.5

IP3

dBm

+28

IP2

dBm

+40

Second Order Harmonic IP

dBm

+45

VSWR Input / Output (max)

1.5:1 / 1.5:1

1.9:1 / 1.9:1

2.0:1 / 2.0:1

DC Current @ 15 Volts (max)

mA

64

67

70

Features

 HIGH GAIN - TWO STAGES: 23.5 dB (TYP.)

 LOW NOISE: <3.8 dB (TYP.)

 HIGH OUTPUT LEVEL:+15.0 dBm (TYP.)

 WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS

Description

The A66 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for consistent performance

and high reliability.

This 2 stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband

frequency range. An active DC biasing network insures

temperature-stable performance.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available.

Product Image

Ordering Information

Part Number

Package

A66

TO-8

SMA66

Surface Mount

CA66 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

10 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

145ºC/W

0.405 W

Junction Temperature Rise

59ºC

** The connectorized version is not RoHs compliant.