Cascadable Amplifier

5 to 300 MHz

Rev. V3

A79 / SMA79

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Parameter

Typical

Guaranteed

Units

25ºC

0º to 50ºC

-54º to +85ºC*

Frequency

MHz

2-350

5-300

5-300

Small Signal Gain (min)

dB

14.0

13.0

12.5

Gain Flatness (max)

dB

±0.3

±0.7

±1.0

Reverse Isolation

dB

18

Noise Figure (max)

dB

4.0

5.0

5.5

Power Output

@ 1 dB comp. (min)

dBm

22.0

20.5

20.0

IP3

dBm

+38

IP2

dBm

+55

Second Order Harmonic IP

dBm

+61

VSWR Input / Output (max)

1.5:1 / 1.5:1

1.9:1 / 1.9:1

2.0:1 / 2.0:1

DC Current @ 15 Volts (max)

mA

88

93

98

Features

 HIGH DYNAMIC RANGE: +116 DB/1 MHz

 HIGH OUTPUT POWER: +22 dBm (TYP.)

 HIGH THIRD ORDER I.P.: +38 dBm (TYP.)

 LOW NOISE FIGURE: 4.0 dB (TYP.)

Description

The A79 RF amplifier is a discrete thin film hybrid design,

which incorporates the use of thin film manufacturing

processes for accurate performance and high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. An active DC biasing network is used for

temperature-stable performance, in addition to an RF Choke,

used for power supply decoupling.

Both TO-8 and Surface Mount packages are hermetically sealed,

and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A79

TO-8

SMA79

Surface Mount

CA79**

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

+18 dBm

Short Term Input power

(1 minute max.)

100 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

75ºC/W

0.878 W

Junction Temperature Rise

+66ºC

** The connectorized version is not RoHs compliant.