DF2B6.8ACT datasheet(2/8 Pages) TOSHIBA

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DF2B6.8ACT

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

VRWM: Working peak reverse

voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

Fig.

Fig. 4.1

4.1

4.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Reverse breakdown voltage

Reverse current

Clamp voltage

Dynamic resistance

Total capacitance

Symbol

VRWM

VBR

RDYN

Note

(Note 1)

(Note 2)

Test Condition



IBR = 1 mA

VRWM = 5 V

IPP = 1 A



VR = 0 V, f = 1 MHz

Min



5.8



Typ.



6.8



0.3

Max

5.0

7.8

0.5



Unit

µA

Ω

Note 1: Based on IEC61000-4-5 8/20 µs pulse.

Note 2: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,

extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 3 A to 8 A.

5. Guaranteed ESD Protection (Note)

Guaranteed ESD Protection (Note)

Test Condition

IEC61000-4-2 (Contact discharge)

ESD Protection

±30 kV

Note:

Criterion: No damage to devices.

2014-04-14

Rev.3.0

DF2B6.8ACT Datasheet(PDF) 2 Page - Toshiba Semiconductor

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