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TLP591B Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP591B Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() TLP591B 2014-09-01 2 Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Forward current IF ― 20 25 mA Operating temperature Topr −25 ― 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.2 1.4 1.7 V Reverse current IR VR = 3 V — — 10 μA Capacitance CT V = 0V, f = 1 MHz — 30 60 pF Forward voltage VFD IFD = 10 μA — 7 — V Reverse current IRD VRD = 10 V — 7 — μA Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Open voltage VOC IF = 20 mA 7 8 — V Short Current ISC IF = 20 mA 24 40 — μA Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance (input to output) CS VS = 0V, f = 1 MHz — 0.8 — pF Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×10 10 10 14 — Ω Isolation voltage BVS AC, 1 minute 2500 — — Vrms AC, 1 second, in oil — 5000 — DC, 1 minute, in oil — 5000 — Vdc Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Turn −on time tON IF = 20 mA, CL = 1000 pF (Note 2) — 0.2 — ms Turn −off time tOFF — 3 — ms (Note 2) Switching time test circuit IF tOFF tON VOUT 1 V 5 V 0 V VOUT CL IF |
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