NPA1008 datasheet(2/11 Pages) MA-COM

2 / 11 page

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 2700 MHz

Rev. V3

NPA1008

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC Electrical Specifications: TC = 25°C

RF Electrical Specifications: TC = 25 °C , VDS = 28 V, IDQ = 88 mA

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

Drain-Source Leakage Current

VGS = -8 V, VDS = 100 V

IDLK

Gate-Source Leakage Current

VGS = -8 V, VDS = 0 V

IGLK

Gate Threshold Voltage

VDS = 28 V, ID = 4 mA

-2.5

-1.5

-0.5

Gate Quiescent Voltage

VDS = 28 V, ID = 88 mA

VGSQ

-2.1

-1.2

-0.3

On Resistance

VDS = 2 V, ID = 45 mA

RON

1.2

Saturated Drain Current

VDS = 7 V pulsed, pulse width 300 µs

ID(SAT)

2.3

Parameter

Test Conditions

Symbol

Min.

Typ.

Max.

Units

Small Signal Gain

CW, 1900 MHz

GSS

15.6

Gain

CW, POUT = 37 dBm, 1900 MHz

10.5

12.0

Saturated Output Power

CW, 1900 MHz

PSAT

38.9

dBm

Drain Efficiency

CW, 1900 MHz

ηSAT

47.0

Power Added Efficiency

CW, POUT = 37 dBm, 1900 MHz

PAE

44.7

Ruggedness

All phase angles



VSWR = 15:1, No Device Damage

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