MICROWAVE CORPORATION

8 - 74

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC314

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 0.7 - 4.0 GHz

v02.0802

General Description

Features

Functional Diagram

The HMC314 is a GaAs InGaP Heterojunction Bipo-

lar Transistor (HBT) MMIC amplifier that operates

from a single positive supply. This amplifier also

incorporates a power down feature. When the “Vpd”

pin is held low, the amplifier will shut down. The

surface mount SOT26 amplifier can be used as a

broadband gain stage for wideband applications.

The amplifier provides 12 dB of gain and +22 dBm

of saturated power while operating from a single

positive +5v supply. The HMC314 is packaged in

an ultra small SOT26 package at a height of only

1.45mm.

P1dB Output Power: +18 dBm

Output IP3: +29 dBm

Gain: 12 dB

Single Supply: 5V

Ultra Small Package: SOT26

Typical Applications

Ideal Broadband Gain Stage for:

• 2.2 - 2.7 GHz MMDS

• 3.5 GHz Wireless Local Loop

• Low Profile Portable Wireless Devices

• WLAN Systems

Parameter

Vs = +5V, Rbias = 10 Ohm

Units

Min.

Typ.

Max.

Frequency Range

0.7 - 4.0

GHz

Gain

712

16

dB

Gain Variation Over Temperature

0.015

0.025

dB/°C

Input Return Loss

612

dB

Output Return Loss

2

6

dB

Reverse Isolation

22

30

dB

Output Power for 1 dB Compression (P1dB) @ 1 GHz

15

18

dBm

Saturated Output Power (Psat) @ 1 GHz

19

22

dBm

Output Third Order Intercept (IP3) @ 1 GHz

26

29

dBm

Switching Speed

On/Off

60

ns

Supply Current (Icc)

150

mA

Control Voltage (Vpd)

0/5

Volts

Control Current (Ipd)

.001/12

mA