Cascadable Amplifier

100 to 2000 MHz

Rev. V4

A32 / SMA32

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

10-2000

10-2000

10-2000

Small Signal Gain (min)

dB

10.0

9.0

8.5

Gain Flatness (max)

dB

±3.0

±0.7

±1.0

Reverse Isolation

dB

20

Noise Figure (max)

dB

3.5

4.0

4.5

Power Output

@ 1 dB comp. (min)

dBm

21.0

19.0

18.0

IP3

dBm

+32

IP2

dBm

+38

Second Order Harmonic IP

dBm

+40

VSWR Input / Output (max)

1.8:1 / 1.8:1

2.1:1 / 2.1:1

2.3:1 / 2.3:1

DC Current @ 15 Volts (max)

mA

94

98

100

Features

 LOW NOISE FIGURE: 3.5 dB (TYP.)

 HIGH THIRD ORDER IP: +32 dBm (TYP.)

 HIGH OUTPUT LEVEL: +21 dBm (TYP.)

 LOW VSWR: 1.8:1 (TYP.)

Description

The A32 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance

and high reliability.

This single stage GaAs FET feedback amplifier design displays

impressive performance characteristics over a broadband

frequency range. An RF choke is used for DC power supply

decoupling.

Both TO-8 and Surface Mount packages are hermetically

sealed, and MIL-STD-883 environmental screening is available

.

Product Image

Ordering Information

Part Number

Package

A32

TO-8

SMA32

Surface Mount

CA32

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+17 V

Continuous Input Power

13 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

182ºC/W

0.288 W

Junction Temperature Rise

+52ºC