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CPDVR5V0-HF Datasheet(PDF) 2 Page - Comchip Technology |
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CPDVR5V0-HF Datasheet(HTML) 2 Page - Comchip Technology |
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2 / 4 page ![]() RATING AND CHARACTERISTIC CURVES (CPDVR5V0-HF) -100 -75 -50 -25 0 25 50 TA=100°C TA=25°C Pulsed 75 100 Reverse Voltage, (V) 0 3 6 9 12 15 TA=25°C f=1MHz SMD ESD Protection Diode μA V 5 IR VRWM Reverse leakage current Reverse stand-off voltage Parameter Conditions Symbol Min Typ Max Unit VRWM = 5 V Electrical Characteristics (at TA=25°C unless otherwise noted) Breakdown voltage IT = 1 mA V(BR) Clamping voltage IPP = 4 A VC V 5.8 Junction capacitance CJ 15 pF 0.1 10 V 8.0 VR = 0V , f = 1MHz - - - - - - - - 12 Fig.2 - Capacitance Characteristics Fig.1 - Reverse Characteristics Reverse Voltage, (V) -8 -6 -4 -2 8 6 4 2 0 6 4 2 0 5 3 1 Fig.3 - VC IPP — Reverse Peak Pulse Current, (A) 8.0 7.5 7.0 6.5 6.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 TA=25°C tp=8/20μs Page 2 Comchip Technology CO., LTD. REV: C QW-JP042 Company reserves the right to improve product design , functions and reliability without notice. (1) (2) (1) Other . voltages available upon request Notes: (2) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5. |
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