Cascadable Amplifier

10 to 500 MHz

Rev. V2

A55 / SMA55

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Parameter

Units

Typical

Guaranteed

25ºC

0º to 50ºC -54º to +85ºC*

Frequency

MHz

5-600

10-500

10-500

Small Signal Gain (min)

dB

14.7

14.0

13.5

Gain Flatness (max)

dB

±0.5

±0.8

±1.0

Reverse Isolation

dB

20

Noise Figure (max)

dB

5.0

6.0

6.5

Power Output

@ 1 dB comp. (min)

dBm

11.0

9.0

8.0

IP3

dBm

+24

IP2

dBm

+37

Second Order Harmonic IP

dBm

+42

VSWR Input / Output (max)

1.5:1 / 1.5:1

1.9:1 / 1.9:1

2.0:1 / 2.0:1

DC Current @ 15 Volts (max)

mA

30

35

37

Features

 AVAILABLE IN SURFACE MOUNT

 MEDIUM OUTPUT LEVEL: +11 dBm (TYP.)

 MEDIUM THIRD ORDER I.P. + 24 dBm (TYP.)

Description

The A55 RF amplifier is a discrete hybrid design, which uses

thin film manufacturing processes for accurate performance

and

high reliability.

This single stage bipolar transistor feedback amplifier design

displays impressive performance over a broadband frequency

range. Both TO-8 and Surface Mount packages are

Hermetically sealed, and MIL-STD-883 environmental screen-

ing is available

.

Product Image

Ordering Information

Part Number

Package

A55

TO-8

MAAM-008723-0SMA55

Surface Mount

CA55 **

SMA Connectorized

Absolute Maximum Ratings

Parameter

Absolute

Maximum

Storage Temperature

-62ºC to +125ºC

Case Temperature

+125ºC

DC Voltage

+18 V

Continuous Input Power

13 dBm

Short Term Input power

(1 minute max.)

50 mW

Peak Power (3 µsec max.)

0.5 W

“S” Series Burn-In

Temperature (case)

+125ºC

Parameter

Rating

45ºC/W

0.194 W

Junction Temperature Rise

9ºC

** The connectorized version is not RoHs compliant.