SSM6K210FE datasheet(2/6 Pages) TOSHIBA

2 / 6 page

SSM6K210FE

2014-03-01

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain-source breakdown voltage

V (BR) DSS

ID = 1 mA, VGS = 0 V

⎯

Drain cutoff current

IDSS

VDS = 30 V, VGS = 0 V

⎯

μA

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±1

μA

Gate threshold voltage

Vth

VDS = 5 V, ID = 1 mA

1.1

⎯

2.6

Forward transfer admittance

⏐Yfs⏐

VDS = 5 V, ID = 0.6 A

(Note 2)

0.73

1.45

⎯

ID = 0.6 A, VGS = 10 V

(Note 2)

⎯

171

228

Drain-source ON-resistance

RDS (ON)

ID = 0.6 A, VGS = 4.0 V

(Note 2)

⎯

271

371

Input capacitance

Ciss

⎯

Output capacitance

Coss

⎯

Reverse transfer capacitance

Crss

VDS = 15 V, VGS = 0 V, f = 1 MHz

⎯

Total Gate Charge

⎯

2.8

⎯

Gate-Source Charge

Qgs

⎯

1.6

⎯

Gate-Drain Charge

Qgd

VDS = 15 V, ID = 1.5 A, VGS = 10 V

⎯

1.2

⎯

Turn-on time

ton

⎯

12.0

⎯

Switching time

Turn-off time

toff

VDD = 15 V, ID = 0.6 A,

VGS = 0 to 4.0 V, RG = 10 Ω

⎯

6.9

⎯

Drain-source forward voltage

VDSF

ID = -1.4 A, VGS = 0 V

(Note 2)

⎯

-0.85

-1.2

Note 2: Pulse test

Switching Time Test Circuit

Notice on Usage

Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the

SSM6K210FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than

Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).

Take this into consideration when using the device.

Handling Precaution

When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is

protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that

come into direct contact with devices should be made of antistatic materials.

4.0 V

ton

toff

(b) VIN

0 V

VDD

VDS (ON)

10%

90%

10%

(a) Test Circuit

VDD = 15 V

RG = 10 Ω

Duty

≤ 1%

VIN: tr, tf < 5 ns

Common Source

= 25°C

4.0 V

OUT

VDD

μs

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