DSS45160FDB

Datasheet Number: DS37802 Rev.1 - 2

2 of 9

www.diodes.com

December 2015

© Diodes Incorporated

DSS45160FDB

Absolute Maximum Ratings

Characteristic

Symbol

NPN

PNP

Unit

Collector-Base Voltage

60

-60

V

Collector-Emitter Voltage

60

-60

V

Emitter-Base Voltage

7

-7

V

Continuous Collector Current

1

-1

A

Peak Pulse Collector Current

1.5

-1.5

A

Base Current

300

-300

mA

Peak Base Current

1

-1

A

Characteristic

Symbol

Value

Unit

Power Dissipation

(Notes 5 & 7)

405

mW

(Notes 5 & 8)

510

(Notes 6 & 7)

1650

(Notes 6 & 8)

2470

Thermal Resistance, Junction to Ambient

(Notes 5 & 7)

308

°C/W



(Notes 5 & 8)

245

(Notes 6 & 7)

76

(Notes 6 & 8)

51

Thermal Resistance, Junction to Lead

(Note 9)

18

°C/W



Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge

– Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge

– Machine Model

ESD MM

400

V



C

Notes:

5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is

measured under still air conditions whilst operating in a steady-state.

6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm

7. For a dual device with one active die.

8. For dual device with 2 active die running at equal power.

9. Thermal resistance from junction to solder-point (on the exposed collector pads).

10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

Thermal Characteristics and Derating Information

0.1

1

10

1m

10m

100m

1

100m

1

10

1m

10m

100m

1

PNP Safe Operating Area

Single Pulse

T

amb

=25°C

See note 5 &7

V

CE(sat)

Limit

100µs

1ms

10ms

100ms

1s

DC

NPN Safe Operating Area

V

CE

Collector-Emitter Voltage (V)

Single Pulse

T

amb

=25°C

See note 5 & 7

100µs

1ms

10ms

100ms

1s

DC

V

CE(sat)

Limit

-V

CE

Collector-Emitter Voltage (V)