MICROWAVE CORPORATION

15 - 8

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

15

MMIC VCO w/ BUFFER

AMPLIFIER, 2.05 - 2.25 GHz

v01.0604

General Description

Features

Functional Diagram

The HMC384LP4 is a GaAs InGaP Heterojunc-

tion Bipolar Transistor (HBT) MMIC VCO with

integrated resonator, negative resistance device,

varactor diode, and buffer amplifier. The VCO’s

phase noise performance is excellent over tem-

perature, shock, vibration and process due to the

oscillator’s monolithic structure. Power output is

3.5 dBm typical from a 3.0V supply voltage. The

voltage controlled oscillator is packaged in a low

cost leadless QFN 4 x 4 mm surface mount pack-

age.

Pout: +3.5 dBm

Phase Noise: -112 dBc/Hz @100 KHz

No External Resonator Needed

Single Supply: 3V @ 35 mA

Typical Applications

Low noise MMIC VCO w/Buffer Amplifier for:

• Wireless Infrastructure

• Industrial Controls

• Test Equipment

• Military

Parameter

Min.

Typ.

Max.

Units

Frequency Range

2.05 - 2.25

GHz

Power Output

0.5

3.5

dBm

SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output

-112

dBc/Hz

Tune Voltage (Vtune)

0

10

V

Supply Current (Icc) (Vcc = +3.0V)

35

mA

Tune Port Leakage Current

10

µA

Output Return Loss

6dB

Harmonics

2nd

3rd

-7

-23

dBc

dBc

Pulling (into a 2.0:1 VSWR)

2.5

MHz pp

Pushing @ Vtune= +5V

5

MHz/V

Frequency Drift Rate

0.25

MHz/°C

HMC384LP4