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HMC429LP4 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC429LP4 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 6 page ![]() MICROWAVE CORPORATION 15 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 15 MMIC VCO w/ BUFFER AMPLIFIER, 4.45 - 5.0 GHz v01.0604 General Description Features Functional Diagram The HMC429LP4 is a GaAs InGaP Heterojunc- tion Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO’s phase noise per- formance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.0 dBm typical from a single supply of 3.0V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4 x 4 mm surface mount package. Pout: +4.0 dBm Phase Noise: -105 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 30 mA QFN Leadless SMT Package, 16 mm2 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • 802.11a, HiperLAN WLAN • VSAT, UNII & Microwave Radio • Test Equipment & Industrial Controls • Military Electrical Specifications, T A = +25° C, Vcc = +3V Parameter Min. Typ. Max. Units Frequency Range 4.45 - 5.0 GHz Power Output 1.0 4.0 dBm SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output -105 dBc/Hz Tune Voltage (Vtune) 0 10 V Supply Current (Icc) (Vcc = +3.0V) 30 mA Tune Port Leakage Current 10 µA Output Return Loss 6dB Harmonics 2nd 3rd -11 -23 dBc dBc Pulling (into a 2.0:1 VSWR) 10 MHz pp Pushing @ Vtune= +5V 14 MHz/V Frequency Drift Rate 0.4 MHz/°C HMC429LP4 |
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