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HMC464LP5 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC464LP5 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
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1 / 6 page ![]() MICROWAVE CORPORATION 8 - 268 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 HMC464LP5 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz v00.0304 General Description Features Functional Diagram The HMC464LP5 is a GaAs MMIC PHEMT Dis- tributed Power Amplifier in a leadless 5 x 5 mm surface mount package which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, +30 dBm output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good from 2 - 18 GHz making the HMC464LP5 ideal for EW, ECM and radar driver amplifier as well as test equipment applications. The wideband ampli- fier I/O’s are internally matched to 50 Ohms. +26 dBm P1dB Output Power Gain: 14 dB +30 dBm Output IP3 Supply Voltage: +8.0V @ 290 mA 50 Ohm Matched Input/Output 25 mm2 Leadless SMT Package Typical Applications The HMC464LP5 wideband driver is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military EW, ECM & C3I • Test Instrumentation • Fiber Optics Electrical Specifications, T A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 2.0 - 6.0 6.0 - 16.0 16.0 - 20.0 GHz Gain 12 14 11.5 13.5 8 11 dB Gain Flatness ±0.5 ±0.5 ±1.0 dB Gain Variation Over Temperature 0.025 0.035 0.03 0.04 0.05 0.06 dB/ °C Input Return Loss 15 10 7 dB Output Return Loss 15 9 11 dB Output Power for 1 dB Compression (P1dB) 23.5 26.5 22 25 18 21 dBm Saturated Output Power (Psat) 27.5 26 24.0 dBm Output Third Order Intercept (IP3) 32 26 22 dBm Noise Figure 4.0 4.0 6.0 dB Supply Current (Idd) (Vdd= 8V, Vgg= -0.5V Typ.) 290 290 290 mA * Adjust Vgg1 between -2 to 0V to achieve Idd= 290 mA typical. |
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