BAS16T datasheet(1/4 Pages) YEASHIN

Part #	BAS16T

Description	Silicon Switching Diode

PDF	4 Pages

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Manufacturer	YEASHIN [Yea Shin Technology Co., Ltd]

Direct Link	http://www.yeashin.com

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DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20130922

BAS16T

H

Silicon Switching Diode

Symbol

Max

Unit

Continuous Reverse Voltage

VR

75

V

Recurrent Peak Forward Current

IR

200

mA

Peak Forward Surge Current

Pulse Width = 10

µs

IFM(surge)

500

mA

Total Power Dissipation, One Diode Loaded

TA = 25°C

Derate above 25

°C

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

PD

150

1.6

mW

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

One Diode Loaded

Mounted on a Ceramic Substrate

(10 x 8 x 0.6 mm)

RθJA

0.625

°C/mW

DEVICE MARKING

BAS16T = A6

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

VF

—

715

866

1000

1250

mV

Reverse Current

(VR = 75 V)

(VR = 75 V, TJ = 150°C)

(VR = 25 V, TJ = 150°C)

IR

—

1.0

50

30

µA

Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

2.0

pF

Reverse Recovery Time

(IF = IR = 10 mA, RL = 50 Ω) (Figure 1)

trr

—

6.0

ns

Stored Charge

(IF = 10 mA to VR = 6.0 V, RL = 500 Ω) (Figure 2)

QS

—

45

PC

Forward Recovery Voltage

(IF = 10 mA, tr = 20 ns) (Figure 3)

VFR

—

1.75

V

3

CATHODE

1

ANODE

Rating

MAXIMUM RATINGS (TA = 25oC)

FEATURE

Device

Marking

Shipping

BAS16T

A6

3000/Tape&Reel

BAS16T

A6

10000/Tape&Reel

We declare that the material of product

compliance with RoHS requirements.

SOT-523/SC-89

S- Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable.

ORDERING INFORMATION

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