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ST002 Datasheet(PDF) 3 Page - Stanson Technology

Part # ST002
Description  This high-density process is especially tailored to minimize on-state resistance
PDF  7 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST002 Datasheet(HTML) 3 Page - Stanson Technology

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ST1002
N Channel Enhancement Mode MOSFET
3.0A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
ST1002 2013 . V1
3
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=250uA
100
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250uA
1
2.5
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=80V,VGS=0V
1
uA
VDS=80V,VGS=0V
TJ=55℃
10
Drain-source On-Resistance
RDS(on)
VGS=10V,ID=3.0A
VGS=4.5V,ID=2.0A
128
133
135
140
mΩ
Diode Forward Voltage
VSD
IS=1.7A,VGS=0V
1.0
V
Dynamic
Total Gate Charge
Qg
VDS=50V
VGS=10V
ID≡2.0A
45
nC
Gate-Source Charge
Qgs
7.2
Gate-Drain Charge
Qgd
22
Input Capacitance
Ciss
VDS=30V
VGS=0V
F=1MHz
640
pF
Output Capacitance
Coss
160
Reverse Transfer Capacitance
Crss
88
Turn-On Time
td(on)
tr
VDD=30V
RL=30Ω
ID=1.0A
VGEN=10V
RG=6Ω
11
21
nS
10
19
Turn-Off Time
td(off)
tf
24
44
21
39



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