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RDBLS207G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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RDBLS207G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 4 page ![]() RDBLS207G CREAT BY ART - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - Halogen-free according to IEC 61249-2-21 Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM V VRMS V VDC V IF(AV) A I 2tA2s trr ns TJ °C TSTG °C Note 2: Reverse recovery time test conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document Number: DS_D0000152 Version: A15 Storage temperature range - 55 to +150 IR 2 500 Maximum reverse current @ rated VR TJ=25°C TJ=125°C Maximum instantaneous forward voltage (Note 1) IF= 2 A VF V μA Operating junction temperature range - 55 to +150 2 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 10.3 Note 1: Pulse test with PW=300μs,1% duty cycle Typical thermal resistance RθJL RθJA 22 62 °C/W A PARAMETER SYMBOL 1.15 UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage 50 Rating for fusing (t<8.3ms) Maximum average forward rectified current - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: Molded plastic body Taiwan Semiconductor 2A, 1000V Fast Recovery Glass Passivated Bridge Rectifier FEATURES DBLS Moisture sensitivity level: level 1, per J-STD-020 RDBLS207G 1000 700 1000 Maximum reverse recovery time (Note 2) 300 Polarity: Polarity as marked on the body Weight: 0.36 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) |
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