2SC2383 datasheet(1/2 Pages) DGNJDZ

Part #	2SC2383

Description	TO-92L Plastic-Encapsulate Transistors

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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DONGGUAN NANJING ELECTRONICS LTD.,

TO-92L Plastic-Encapsulate Transistors

2SC2383

TRANSISTOR (NPN)

FEATURE

High Voltage: VCEO=160V

Large Continuous Collector Current Capability

Complementary to 2SA1013

MAXIMUM RATINGS (

Ta=25

unless otherwise noted

℃

)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

1

A

PC

Collector Power Dissipation

0.75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

M

ax

U

nit

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA , IE=0

160

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA, IB=0

160

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10μA, IC=0

6

V

Collector cut-off current

ICBO

VCB=150V, IE=0

1

μA

Collector cut-off current

ICER

VCB=150V,REB= 10MΩ

10

μA

Emitter cut-off current

IEBO

VEB=6V, IC=0

1

μA

hFE1

VCE=5V, IC=200mA

60

320

DC current gain

hFE2

VCE=5V, IC=10mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=500m A, IB=50mA

1

V

Base-emitter voltage

VBE

IC=5mA, VCE= 5V

0.75

V

Transition frequency

f T

VCE=5V, IC=200mA

20

MHz

CLASSIFICATION OF hFE1

Rank

R

O

Y

Range

60-120

100-200

160-320

TO-92L

1.

EMITTER

2.

COLLECTOR

3.

BASE

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