BC556 datasheet(2/4 Pages) OLITECH

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ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base

breakdown voltage

BC556

V(BR)CBO

IC= -0.1mA,IE=0

-80

BC557

-50

BC558

-30

Collector-emitter

breakdown voltage

BC556

V(BR)CEO

IC=-2mA,IB=0

-65

BC557

-45

BC558

-30

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

Collector cut-off current

BC556

ICBO

VCB=-70V,IE=0

-0.1

μA

BC557

VCB=-45V,IE=0

-0.1

μA

BC558

VCB=-25V,IE=0

-0.1

μA

Collector cut-off current

BC556

ICEO

VCE=-60V,IB=0

-0.1

μA

BC557

VCE=-40V,IB=0

-0.1

μA

BC558

VCE=-25V,IB=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-5V, IC=-2mA

120

800

Collector-emitter saturation voltage

VCE(sat)

IC=-10mA,IB=-0.5mA

-0.3

IC=-100mA,IB=-5mA

-0.65

Base-emitter saturation voltage

VBE(sat)

IC=-10mA,IB=-0.5mA

-0.8

IC=-100mA,IB=-5mA

-1

Base-emitter voltage

VBE

VCE=-5V, IC=-2mA

-0.55

-0.7

VCE=-5V, IC=-10mA

-0.82

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

Transition frequency

BC556

VCE=-5V,IC=-10mA, f=100MHz

150

MHz

BC557

150

MHz

BC558

150

MHz

CLASSIFICATION of hFE

RANK

RANGE

110-220

180-460

420-800

BC556/BC557/BC558

Plastic-Encapsulate Transistors

Email: info@olitech-elec.com

Website: www.olitech-elec.com

OLITECH ELECTRONICS CO. LTD.

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