ST8550D datasheet(2/5 Pages) DGNJDZ

Part #	ST8550D

Description	PNP Silicon Epitaxial Planar Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2 / 5 page

8550

Characteristics at Tamb=25

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE=1V, -IC=100mA

at -VCE=1V, -IC=350mA

ST 8550B

ST 8550C

ST 8550D

ST 8550E

hFE

120

160

300

120

200

300

380

Collector Cutoff Current

at -VCB=35V

ICBO

100

Collector Saturation Voltage

at -IC=500mA, -IB=50mA

VCE(sat)

0.5

Base Saturation Voltage

at -IC=500mA, -IB=50mA

VBE(sat)

1.2

Collector Emitter Breakdown Voltage

at -IC=2mA

V(BR)CEO

Collector Base Breakdown Voltage

at -IC=10μA

V(BR)CBO

Emitter Base Breakdown Voltage

at -IE=100μA

V(BR)EBO

Gain Bandwidth Product

at -VCE=5V, -IC=10mA, f=50MHz

100

MHz

Collector Base Capacitance

at -VCB=10V, f=1MHz

CCBO

Thermal Resistance Junction to Ambient

RthA

200

K/W

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

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