◎ SEMIHOW REV.A1,Dec 2011

Switch Mode series NPN Epitaxial silicon Power Transistor

- Low voltage, high speed power switching

- Suitable for switching regulator, inverters motor controls

KSH1408F

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Tc=25℃)

Max. Operating Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

80

80

5

4

8

0.4

25

150

-65~150

V

V

V

A

A

A

W

℃

℃

4 Amperes

NPN Silicon Power Transistor

25 Watts

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Emitter Breakdown Voltage

V

CEO

I

80

V

Collector Cut-off Current

I

CBO

V

30

uA

Emitter Cut-off Current

I

EBO

V

10

uA

*DC Current Gain

h

FE1

h

FE2

V

V

40

15

240

*Collector-Emitter Saturation Voltage

V

I

2

V

*Base-Emitter Saturation Voltage

V

I

1.5

V

Output Capacitance

C

ob

V

90

㎊

Current Gain Bandwidth Product

f

T

V

8

㎒

* Pulse Test: Pulse Width

≤300μs, Duty Cycle≤2%

TO-220F

1. Base

2. Collector

3. Emitter

hFE1

Classification

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

Note.

S

YWW

Z

KSH1408F

S

SemiHow Symbol

YWW

Y; year code, WW; week code

Z

hFE1 Classification

Package Mark information.

1 2

3