NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 12A

KSH13009A

KSH13009AF / KSH13009AL

CHARACTERISTICS

SYMBOL

RATING

UNIT

TO-220

TO-220F

TO-3P

Collector-Base Voltage

V

CBO

700

V

Collector-Emitter Voltage

V

CEO

400

V

Emitter-Base Voltage

V

EBO

9V

Collector Current(DC)

I

C

12

A

Collector Current(Pulse)

I

CP

24

A

Base Current

I

B

6A

Collector Dissipation(Tc=25

)

P

C

100

50

130

W

Junction Temperature

T

J

150

Storage Temperature

T

STG

-65~150

unless otherwise noted

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

V

CBO

I

700

V

Collector-Emitter Breakdown Voltage

V

CEO

I

400

V

Emitter Cut-off Current

I

EBO

V

1

DC Current Gain

h

FE1

h

FE2

V

V

8

6

40

30

Collector-Emitter Saturation Voltage

V

I

I

I

1

1.5

3

V

V

V

Base-Emitter Saturation Voltage

V

I

I

1.4

1.6

V

V

Output Capacitance

C

ob

V

180

Current Gain Bandwidth Product

f

T

V

4

Turn on Time

t

on

Vcc=125V, Ic=8A

I

R

(Note 2)

1.1

Storage Time

t

stg

3.0

Fall Time

t

F

0.7

Notes ;

1. Pulse Test: Pulse Width

2. Final Test Condition : UI9600, Vcc=5V, Ic=0.5A ( t