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TIP126 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # TIP126
Description  Si-Epitaxial PlanarTransistors
PDF  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

TIP126 Datasheet(HTML) 1 Page - Diotec Semiconductor

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1) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1
TIP125, TIP126, TIP127
Darlington Transistors
PNP
Si-Epitaxial PlanarTransistors
PNP
Si-Epitaxial PlanarTransistoren
Version 2004-07-01
Collector current – Kollektorstrom
5 A
Plastic case
TO-220AB
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1 = B1
2 = C2
3 = E2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25°C)
Grenzwerte (T
A = 25°C)
TIP125
TIP126
TIP127
Collector-Emitter-voltage
B open
- V
CE0
60 V
80 V
100 V
Collector-Base-voltage
E open
- V
CB0
60 V
80 V
100 V
Emitter-Base-voltage
C open
- V
EB0
50 V
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
T
C = 25°C
P
tot
P
tot
2 W
1)
65 W
Collector current – Kollektorstrom (dc)
- I
C
5 A
Peak Collector current – Kollektor-Spitzenstrom - I
CM
8 A
Base current – Basisstrom (dc)
- I
B
120 mA
Junction temperature – Sperrschichttemperatur
T
j
- 65…+ 150°C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150°C
Characteristics (T
j = 25°C)
Kennwerte (T
j = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
I
B = 0, - VCE = 30 V
I
B = 0, - VCE = 40 V
I
B = 0, - VCE = 50 V
TIP125
TIP126
TIP127
- I
CE0
- I
CE0
- I
CE0
500 nA
500 nA
500 nA
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, - VCB = 60 V
I
E = 0, - VCB = 80 V
I
E = 0, - VCB = 100 V
TIP125
TIP126
TIP127
- I
CB0
- I
CB0
- I
CB0
200 nA
200 nA
200 nA


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