TIP127 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

Darlington Transistors

TIP125, TIP126, TIP127

Characteristics (T

j = 25°C)

Kennwerte (T

j = 25°C)

Min.

Typ.

Max.

Emitter-Base cutoff current – Emitterreststrom

C = 0, - VEB = 5 V

- I

EB0

––

2 mA

Collector saturation voltage – Kollektor-Sättigungsspg.

- I

C = 3 A, - IB = 12 mA

- I

C = 5 A, - IB = 20 mA

- V

CEsat

- V

CEsat

–

2 V

4 V

Base-Emitter on-voltage – Basis-Emitter-Spannung

- I

C = 3 A, - VCE = 3 V

- V

BEon

–

2.5 V

DC current gain – Kollektor-Basis-Stromverhältnis

- V

CE = 3 V, - IC = 0.5 A

- V

CE = 3 V, - IC = 3 A

1000

–

Small signal current gain – Kleinsignal-Stromverstärkung

- V

CE = 4 V, - IC = 3 A, f = 1 MHz

4––

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 100 kHz

CB0

–

200 pF

Thermal resistance – Wärmewiderstand

junction to ambient air – Sperrschicht zu umgebender Luft

junction to case – Sperrschicht zu Gehäuse

thA

62.5 K/W

thC

2 K/W

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

M 4

9 ± 10% lb.in.

1 ± 10% Nm

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

TIP120, TIP121, TIP122

Equivalent Circuit – Ersatzschaltbild

TIP127 Datasheet(PDF) 2 Page - Diotec Semiconductor

TIP127 Datasheet(HTML) 2 Page - Diotec Semiconductor

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