BC856S datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2 Kupferbelag (Lötpad) an jedem Anschluß

General Purpose Transistors

BC856S ... BC858S

Characteristics (T

j = 25/C)

Kennwerte (T

j = 25/C)

Min.

Typ.

Max.

Collector saturation volt. – Kollektor-Sättigungsspag.

- I

C = 10 mA, - IB = 0.5 mA

- I

C = 100 mA, - IB = 5 mA

-V

CEsat

-V

CEsat

–

90 mV

200 mV

250 mV

600 mV

Base saturation voltage – Basis-Sättigungsspannung

- I

C = 10 mA, - IB = 0.5 mA

- I

C = 100 mA, - IB = 5 mA

- V

BEsat

- V

BEsat

–

700 mV

900 mV

–

Base-Emitter voltage – Basis-Emitter-Spannung

- V

CE = 5 V, - IC = 2 mA

- V

CE = 5 V, - IC = 10 mA

- V

BEon

- V

BEon

600 mV

–

650 mV

–

750 mV

820 mV

Collector-Base cutoff current – Kollektorreststrom

E = 0, - VCB = 30 V

E = 0, - VCB = 30 V, Tj = 150/C

- I

CB0

- I

CB0

–

15 nA

Emitter-Base cutoff current – Emitterreststrom

C = 0, - VEB = 5 V

- I

EB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

6 pF

Noise figure – Rauschzahl

- V

CE = 5 V, - IC = 200 :A

G = 2 kS, f = 1 kHz, )f = 200 Hz

–

2 dB

10 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BC846S ... BC848S

Pinning – Anschlußbelegung

BC856S Datasheet(PDF) 2 Page - Diotec Semiconductor

BC856S Datasheet(HTML) 2 Page - Diotec Semiconductor

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