BCF29 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCF 29, BCF 30

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

- I

C = 10 mA, - IB = 0.5 mA

- V

BEsat

–

720 mV

–

- I

C = 50 mA, - IB = 2.5 mA

- V

BEsat

–

810 mV

–

DC current gain – Kollektor-Basis-Stromverhältnis 1)

- V

CE = 5 V, - IC = 10

BCF 29

–90–

BCF 30

–

150

–

- V

CE = 5 V, - IC = 2 mA

BCF 29

120

–

260

BCF 30

215

–

500

Base-Emitter voltage – Basis-Emitter-Spannung 1)

- V

CE = 5 V, - IC = 2 mA

BEon

600 mV

–

750 mV

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

4.5 pF

–

Noise figure – Rauschzahl

- V

CE = 5 V, - IC = 200

:A, R

G = 2 k

f = 1 kHz,

)f = 200 Hz

–

1 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCF 32, BCF 33

Marking – Stempelung

BCF 29 = C7

BCF 30 = C8

BCF29 Datasheet(PDF) 2 Page - Diotec Semiconductor

BCF29 Datasheet(HTML) 2 Page - Diotec Semiconductor

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