BCV47 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2 Kupferbelag (Lötpad) an jedem Anschluß

Darlington Transistors

BCV27, BCV47

Characteristics (T

j = 25/C)

Kennwerte (T

j = 25/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung

C = 100 mA, IB = 0.1 mA

BEsat

–

1.5 V

DC current gain – Kollektor-Basis-Stromverhältnis

CE = 5 V, IC = 1 mA

BCV27

BCV47

4000

2000

–

CE = 5 V, IC = 10 mA

BCV27

BCV47

10000

4000

–

CE = 5 V, IC = 100 mA

BCV27

BCV47

20000

10000

–

Base-Emitter voltage – Basis-Emitter-Spannung

CE = 5 V, IC = 10 mA

- V

BEon

–

1.4 V

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 100 MHz

–

220 MHz

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCV26, BCV46

Marking – Stempelung

BCV27 = FF

BCV47 = FG

Pinning – Anschlußbelegung

BCV47 Datasheet(PDF) 2 Page - Diotec Semiconductor

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