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BCV72 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BCV72 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() 1) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2) Tested with pulses t p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen t p = 300 :s, Schaltverhältnis # 2% 32 01.11.2003 1.1 2.9 ±0.1 0.4 1 2 3 Type Code 1.9 BCV 71, BCV 72 General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (T A = 25 /C) Grenzwerte (T A = 25 /C) BCV 71, BCV 72 Collector-Emitter-voltage B open V CE0 60 V Collector-Base-voltage E open V CB0 80 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (DC) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 200 mA Junction temperature – Sperrschichttemperatur T j 150 /C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /C Characteristics (T j = 25 /C) Kennwerte (T j = 25 /C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom I E = 0, VCB = 20 V I CB0 – – 100 nA I E = 0, VCB = 20 V, Tj = 100 /CI CB0 – – 10 :A Emitter-Base cutoff current – Emitterreststrom I C = 0, VEB = 5 V I EB0 – – 100 nA DC current gain – Kollektor-Basis-Stromverhältnis 2) V CE = 5 V, IC = 10 :A BCV 71 h FE –90– BCV 72 h FE – 150 – V CE = 5 V, IC = 2 mA BCV 71 h FE 110 – 220 BCV 72 h FE 200 – 450 |
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Similar Description - BCV72 |
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