BCW60C datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCW 60

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung 1)

C = 10 mA, IB = 0.25 mA

BEsat

600 mV

–

850 mV

C = 50 mA, IB = 1.25 mA

BEsat

700 mV

–

1050 mV

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 5 V, IC = 10

BCW 60B

–

BCW 60C

–

BCW 60D

100

–

CE = 5 V, IC = 2 mA

BCW 60B

180

–

310

BCW 60C

250

–

460

BCW 60D

380

–

630

CE = 1 V, IC = 50 mA

BCW 60B

–

BCW 60C

–

BCW 60D

100

–

Base-Emitter voltage – Basis-Emitter-Spannung 1)

CE = 5 V, IC = 10

:AV

BEon

–

520 mV

–

CE = 5 V, IC = 2 mA

BEon

550 mV

650 mV

700 mV

CE = 1 V, IC = 50 mA

BEon

–

780 mV

–

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 100 MHz

100 MHz

250 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

1.7 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

EB = 0.5 V, IC = ic = 0, f = 1 MHz

EB0

–

11 pF

–

Noise figure – Rauschzahl

CE = 5 V, IC = 200

:A, R

G = 2 k

f = 1 kHz,

)f = 200 Hz

–

2 dB

6 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW 61 series

Marking – Stempelung

BCW 60B = AB

BCW 60C = AC

BCW 60D = AD

BCW60C Datasheet(PDF) 2 Page - Diotec Semiconductor

BCW60C Datasheet(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

Datasheet Download

Link URL