BFS19 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

High Frequency Transistors

BFS 19

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 10 V, IC = 1 mA

–

225

Base-Emitter voltage – Basis-Emitter-Spannung 1)

CE = 10 V, IC = 1 mA

BEon

650 mV

–

750 mV

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 100 MHz

–

260 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

1 pF

–

Feedback Capacitance – Rückwirkungskapazität

CB = 10 V, IC = ic = 0, f = 1 MHz

–

0.85 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Marking - Stempelung

BFS 19 = F2

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