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2N5415 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5415 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon PNP Power Transistor 2N5415 DESCRIPTION · PNP high-voltage transistor · Low current (max. 200 mA) · High voltage (max. 300 V) APPLICATIONS · Designed for Switching and linear amplification in military, industrial and consumer equipment applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 0.2 A ICM Peak Collector Current 0.4 A IBM Peak Base cCurrent 0.2 A PC Collector Power Dissipation @ Ta<50℃ 1.0 W Collector Power Dissipation @ TC=25℃ 10 TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -60~200 ℃ |
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