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2SC2166 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2166 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emitter Voltage RBE= 10Ω 45 V VEBO Emitter-Base Voltage 4 V IC Collector Current 4 A PC Collector Power Dissipation @TC=25℃ 12.5 W Collector Power Dissipation @Ta=25℃ 1.5 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W Rth j-c Thermal Resistance,Junction to Case 10 ℃/W |
Similar Part No. - 2SC2166 |
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Similar Description - 2SC2166 |
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