S9012 datasheet(1/2 Pages) DGNJDZ

Part #	S9012

Description	PNP Silicon Epitaxial Planar Transistor

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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S9012

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially

suitable for AF-driver stages and low power output

stages.

The transistor is subdivided into three groups, G,

H and I, according to its DC current gain. As

complementary type the NPN transistor 9013 is

recommended.

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

-VCBO

40

V

Collector Emitter Voltage

-VCEO

30

V

Emitter Base Voltage

-VEBO

5

V

Collector Current

-IC

500

mA

Power Dissipation

Ptot

625

mW

Junction Temperature

Tj

150

O

C

Storage Temperature Range

Tstg

- 55 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -VCE = 1 V, -IC = 50 mA

Current Gain Group

at -VCE = 1 V, -IC = 500 mA

G

H

I

hFE

110

1

90

2

90

40

200

300

380

-

Collector Base Cutoff Current

at -VCB = 35 V

-ICBO

-

100

nA

Emitter Base Cutoff Current

at -VEB = 5 V

-IEBO

-

100

nA

Collector Base Breakdown Voltage

at -IC = 100 μA

-V(BR)CBO

40

-

V

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

30

-

V

Emitter Base Breakdown Voltage

at -IE = 100 μA

-V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at -IC = 500 mA, -IB = 50 mA

-VCE(sat)

-

0.6

V

Base Emitter Saturation Voltage

at -IC = 500 mA, -IB = 50 mA

-VBE(sat)

-

1.2

V

Base Emitter Voltage

at -VCE = 1 V, -IC = 100 mA

-VBE

-

1

V

Gain Bandwidth Product

at -VCE = 6 V, -IC = 20 mA

fT

100

-

MHz

1. Emitter 2. Base 3. Collector

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