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2N6898 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6898 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc P-Channel MOSFET Transistor 2N6898 DESCRIPTION ·SOA is power-dissipation limited ·Nanosecond switching speeds ·Linear transfer characteristics ·High input impedance ·Majority carrier device APPLICATIONS · The 2N6898 is designed for application such as switching regulators,switching converters,motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-driver power ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -25 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W PDF pdfFactory Pro www.fineprint.cn |
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