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S1BL Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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S1BL Datasheet(HTML) 1 Page - Taiwan Memory Technology |
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1 / 4 page ![]() CREAT BY ART - Glass passivated junction chip - Ideal for automated placement - Low-Profile Package - Low power loss, high efficiency - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part No. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test 1AL 1BL 1DL 1GL 1JL 1KL 1ML VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A CJ pF trr μs TJ °C TSTG °C Document Number: DS_D1410010 Version: O15 S1AL - S1ML Taiwan Semiconductor 1A, 50V - 1000V Surface Mount Rectifier FEATURES - Moisture sensitivity level: level 1, per J-STD-020 S1AL S1BL S1DL S1GL S1JL - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: Sub SMA Sub SMA S1KL S1ML UNIT Marking code Maximum repetitive peak reverse voltage Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 IR μA A Maximum instantaneous forward voltage (Note 1) @ 1 A VF V Maximum reverse current @ rated VR TJ=25°C TJ=125°C Note 1: Pulse test with PW=300μs, 1% duty cycle - 55 to +175 Typical junction capacitance (Note 2) 9 Typical thermal resistance RθJL RθJA °C/W 25 85 30 85 Note 2: Measured at 1 MHz and Applied VR=4.0 Volts. Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 1.1 5 50 Typical reverse recovery time (Note 3) 1.8 Operating junction temperature range Storage temperature range - 55 to +175 |
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