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NE521 Datasheet(PDF) 4 Page - NXP Semiconductors |
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NE521 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page ![]() Philips Semiconductors Product data NE521 High-speed dual-differential comparator/sense amp 2001 Aug 03 4 DC ELECTRICAL CHARACTERISTICS V+ = +5 V; V– = –5 V, Tamb = 0 °C to +70 °C, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT VOS Input offset voltage V+ = +4.75 V; V– = –4.75 V At 25 °C 6 7.5 mV Over temperature range 10 mV IBIAS Input bias current V+ = +5.25 V, V– = –5.25 V At 25 °C 7.5 20 µA Over temperature range 40 µA IOS Input offset current V+ = +5.25 V, V– = –5.25 V At 25 °C 1.0 5 µA Over temperature range 12 µA VCM Common-mode voltage range V+ = +4.75 V, V– = –4.75 V –3 +3 V Input current V+ = +5.25 V, V– = –5.25 V IIH High VIH = 2.7 V 1G or 2G strobe 50 µA Common strobe S 100 µA Input Current IIL Low VIL = 0.5 V 1G or 2G strobe –2.0 mA Common strobe S –4.0 mA Output voltage VI(S) = 2.0 V VOH High V+ = +4.75 V; V– = –4.75 V; ILOAD = –1 mA 2.7 3.4 V VOL Low V+ = +5.25 V; V– = –5.25 V; ILOAD = 20 mA 0.5 V Supply voltage V+ Positive 4.75 5.0 5.25 V V– Negative –4.75 –5.0 –5.25 V Supply current V+ = 5.25 V; V– = –5.25 V; Tamb = 25 °C ICC+ Positive 27 35 mA ICC– Negative –15 –28 ISC Short-circuit output current -40 –100 mA AC ELECTRICAL CHARACTERISTICS Tamb = 25 °C; RL = 280Ω ; CL=15 pF; V+ = 5 V; V– = 5 V SYMBOL PARAMETER FROM INPUT TO OUTPUT LIMITS UNIT SYMBOL PARAMETER FROM INPUT TO OUTPUT Min Typ Max UNIT Large-signal switching speed Propagation delay tPLH(D) Low to high1 Amp Output 8 12 tPHL(D) High to low1 Amp Output 6 9 ns tPLH(S) Low to high2 Strobe Output 4.5 10 tPHL(S) High to low2 Strobe Output 3.0 6 fMAX Max. operating frequency 40 55 MHz NOTES: 1. Response time measured from 0 V point of ±100 mVP-P 10 MHz square wave to the 1.5 V point of the output. 2. Response time measured from 1.5 V point of input to 1.5 V point of the output. |
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