SOD-323 Plastic-Encapsulate Diodes

FEATURES

For use in low voltage, high frequency inverters

Free wheeling, and polarity protection applications

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

℃

Parameter

Symbol

B5817WS

B5818WS B5819WS

Unit

Non-repetitive peak reverse voltage

20

30

40

V

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

20

30

40

V

RMS reverse voltage

14

21

28

V

Average rectified output current

1

A

Repetitive peak forward current

1.5

A

Power dissipation

Pd

250

mW

Thermal resistance junction to

ambient

400

℃

/W

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unles s other wise specified)

Pa

rameter

Symbol

Test c onditions

Min

Max

Unit

Reverse breakdown voltage

B5817WS

B5818WS

B5819WS

20

30

40

V

Reverse voltage leakage current

B5817WS

B5818WS

B5819WS

1

mA

B5817WS

0.45

0.75

V

B5818WS

0.55

0.875

V

Forward voltage

B5819WS

0.6

0.9

V

Diode capacitance

120

pF

SOD-323

Storage temperature

-

55~+150

℃

Junction temperature

1

25

℃

1

C,Oct,2014

MARKING:

B5818WS:SK

B5819WS:SL

B5817WS:SJ

The marking bar indicates the cathode

Solid dot = Green molding compound device,if none,

the normal device.

Non-repetitive Peak Forward Surge Current

@t=8.3ms

A

DONGGUAN NANJING ELECTRONICS LTD.,