2SC1008 datasheet(1/3 Pages) ETC

Part #	2SC1008

Description	TRANSISTOR NPN

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2SC1008

TRANSISTOR（NPN ）

FEATURES

Power dissipation

PCM :

0.8

W（Tamb=25℃）

Collector current

ICM

:

0.7

A

Collector-base voltage

V(BR)CBO : 80

V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100μA ， IE=0

80

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA ,

IB=0

60

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 10μA， IC=0

8

　　V

Collector cut-off current

ICBO

VCB=60 V ,

IE=0

0.1

　μA

Emitter cut-off current

IEBO

VEB= 5 V ,

IC=0

0.1

　μA

DC current gain

hFE

VCE= 2 V,

IC=50m A

40

400

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB=50 mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50m A

1.1

V

Transition frequency

f T

VCE=10V, IC= 50mA

30

MHz

CLASSIFICATION OF hFE

Rank

R

O

Y

G

Range

40-80

70-140

120-240

200-400

1 2 3

TO—92

1.EMITTER

2. BASE

3. COLLECTOR

东莞市华远电子有限公

司

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.

TEL

86-769-5335378

86-769-5305266

FEX

86-769-5316189

TO-92 Plastic-Encapsulate Transistors

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