BAV19W datasheet(1/3 Pages) DGNJDZ

Part #	BAV19W

Description	Fast switching speed

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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1 / 3 page

BAV19W, BAV20W, BAV21W

Silicon Epitaxial Planar Diodes

High Voltage Switching Diode

Features

• Fast switching speed

• Surface mount package ideally suited for

automatic insertion

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

BAV19W

BAV20W

BAV21W

VRRM

120

200

250

V

Reverse Voltage

BAV19W

BAV20W

BAV21W

VR

100

150

200

V

Average Rectified Forward Current

IF(AV)

200

mA

Forward Continuous Current

IFM

400

mA

Repetitive Peak Forward Current

IFRM

625

mA

Non-repetitive Peak Forward Surge Current

at t = 1 ms

at t = 1 s

IFSM

2.5

0.5

A

Power Dissipation

Pd

250

mW

Operating and Storage Temperature Range

Tj, Tstg

- 65 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

Forward Voltage

at IF = 100 mA

at IF = 200 mA

VF

-

1

1.25

V

Reverse Breakdown Voltage

at IR = 100 µA

BAV19W

BAV20W

BAV21W

V(BR)R

120

200

250

-

V

Reverse Current

at VR = 100 V

at VR = 150 V

at VR = 200 V

BAV19W

BAV20W

BAV21W

IR

-

100

nA

Total Capacitance

at VR = 0 , f = 1 MHz

CT

-

5

pF

Reverse Recovery Time

at IF = IR = 30 mA, Irr = 0.1IR, RL = 100 Ω

trr

-

50

ns

2

Anode

Top View

Marking Code: JX

1

2

PINNING

1

DESCRIPTION

Cathode

Simplified outline SOD-123 and symbol

JX

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