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2SD1173 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD1173
Description  High Power Dissipation
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1173 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
2SD1173
DESCRIPTION
·
High Breakdown Voltage-
: VCBO= 1500V (Min)
·
High Power Dissipation
·
Wide Area of Safe Operation
APPLICATIONS
·
Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
4
A
ICP
Collector Current-Pulse
6
A
PC
Collector Power Dissipation
@ TC TC=25℃
70
W
TJ
Junction Temperature
130
℃
Tstg
Storage Temperature Range
-65~130
℃


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