IRF8010 datasheet(1/8 Pages) IRF

Part #	IRF8010

Description	HEXFET Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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1 / 8 page

Notes

through

are on page 8

www.irf.com

1

08/23/02

IRF8010

SMPS MOSFET

HEXFET® Power MOSFET

VDSS

RDS(on) max

ID

100V

15m

Ω

80A

PD - 94497

TO-220AB

Applications

High frequency DC-DC converters

UPS and Motor Control

Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

Typical RDS(on) = 12mΩ

Absolute Maximum Ratings

Parameter

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

PD @TC = 25°C

Power Dissipation

W

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

dv/dt

Peak Diode Recovery dv/dt

V/ns

TJ

Operating Junction and

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

N•m (lbf•in)

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.57

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

-55 to + 175

300 (1.6mm from case )

1.1(10)

Max.

80

57

320

260

1.8

± 20

16

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