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2SD1606 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1606 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor 2SD1606 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) · High DC Current Gain : hFE= 1000(Min) @IC= 3A APPLICATIONS · Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICP Collector Current-Peak 12 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - 2SD1606 |
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Similar Description - 2SD1606 |
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